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MOTOROLA BIPOLAR POWER TRANSISTOR DATA on *FREE* shipping on qualifying offers. From the collectio n, a scanned-in computer-related la:: dataBooks:: Motorola Bipolar Power Transistor and Thyristor Data. MOTOROLA BIPOLAR POWER TRANSISTOR DATA Created Date: 12/ This e-book contains transistor circuits.. Transistor data is at the bottom of this page and a transistor tester circuit is also provided.. Datasheet search engine for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. ON Semiconductor’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at watts to the watt TO We now have transistors in SO–8 (Dual Transistors) and SOT–/5(1).
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The, Output Power MRF MOTOROLA RF DEVICE DATA n, COLLECTOR EFFICIENCY (%) f (MHz) , Location (Reduced 25% in printed data book, DL/D) MRF MOTOROLA RF DEVICE DATA, Efficiency - 60% Typ MRF 20 W, MHz RF POWER TRANSISTOR. Bipolar Power Transistor Selection Guide January Table of Contents Product page General Purpose Transistors Horizontal Deflection Output Transistors Product page DPAK D2PAK SOT IPAK TO TO--Darlington Transistors DPAK IPAK TO TO TOF TO-3P TO-3PF Switching Transistors DPAK D2PAK TO TO TO TOF . BUY TRANSISTORS. Choosing Bipolar Transistor Replacements. How to choose a replacement for a bipolar transistor 🔗 TOTAL: transistors. 2SCRD3 NPN A 80V Power Transistor Datasheet lOutline Parameter Value DPAK VCEO 80V IC 2A TO lFeatures lInner circuit 1) Suitable for Power Driver. 2) Complementary PNP Types: 2SARD3. 3) Low VCE(sat) VCE(sat)=mV(Max.). (IC/IB=1A/50mA) lApplication LOW FREQUENCY AMPLIFIERFile Size: 1MB.
2SC NPN A 60V Middle Power Transistor Outline Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types: 2SA 3) Low VCE(sat) VCE(sat)=V(Max.) (IC/IB=2A/mA) 4) Lead Free/RoHS Compliant. Inner circuit Applications Motor driver, LED driver Power supply Packaging specificationsFile Size: KB. Inside a Transistor A BJT (Bipolar Junction Transistor) has inside two similar semiconductive materials, and between them there is a third semiconductive material of different type. These semiconductor materials can either be a P type (positive) with an excess of holes, or a N type (negative) with an excess of Size: 1MB. 2SCRP5 Middle Power Transistors (80V / A) Datasheet lOutline Parameter Value SOT SC VCEO 80V IC A MPT3 lFeatures lInner circuit 1)Low saturation voltage,typically VCE(sat)=mV(Max.) (IC/IB=mA/25mA) 2)High speed switching. NPN General Purpose Transistor Datasheet De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use.